| abstract |
The present invention relates to a method for manufacturing a nanowire multichannel field effect transistor device, and more particularly, to the current carrying capacity in the FET device using a conventional nanostructure material (nanotube, nanowire), and chemical sensors and biosensors using the same. A method of manufacturing a nanowire multichannel field effect transistor device capable of improving overcharge (electron or hole) mobility.n n n To this end, the present invention comprises the steps of preparing a nanowire array through a laser interference lithography process; Self-assembling nanomaterials through a solution process on the nanowire array; And manufacturing a multi-channel field effect transistor device using the nanowire array in which the nanomaterials are self-assembled. |