| abstract |
The present invention provides a connection structure for flip chip semiconductor packages in which the cracks and the peeling are suppressed or reduced to increase the reliability, the freedom degree of the circuit board inner layer circuit is improved, and the inductance is reduced. The present invention provides a flip chip semiconductor having a circuit board having a core layer and a build-up layer, a semiconductor element connected to the circuit board via metal bumps, and an encapsulating resin composition enclosed between the semiconductor element and the circuit board. As a connection structure for packages, the glass transition temperature of the hardened | cured material of the said sealing resin composition is 80-150 degreeC, the linear expansion coefficient from room temperature to glass transition temperature is 15-35 ppm / degrees C, and the glass transition temperature of the hardened | cured material of the said buildup layer is It is 170 or more, and the linear expansion coefficient of the plane direction below glass transition temperature is 40 ppm / degrees C or less, and it is a connection structure for flip chip semiconductor packages which has a stack via in at least one buildup layer of the said core layer. |