http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100005493-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_717c792fca7cc9c290c9db33e8fe078b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2008-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_281863b5d3ced56f3956b822c5047bc2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57cdd2ce1c3ac39fe8aed33b67267fbe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c0c2eb97d9556f0b5ac24da4080e18d |
| publicationDate | 2010-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20100005493-A |
| titleOfInvention | Copper wiring formation method |
| abstract | A copper wiring forming method is disclosed. In the method of the present invention, in carrying out the CMP process, a washing liquid containing a solvent, a reducing agent, a pH adjusting agent, a complexing agent, and a compound containing Co (II) ions or Co (III) ions is used. The capping film is formed on the copper wiring by performing the relaxation step. When the relaxation step of the CMP process is performed using the cleaning liquid according to the present invention, a Co-based capping film as an oxidation and diffusion prevention film of copper wiring can be formed without an additional process, thereby simplifying the process and improving productivity. |
| priorityDate | 2008-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 140.