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filingDate 2009-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9c580b7fb1ff4b8126ecbdf441d4fd0
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publicationDate 2009-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20090130836-A
titleOfInvention Air gap formation and integration with patterning cap
abstract Methods of patterning a film and the resulting structures are described herein. In one embodiment, the method includes forming an amorphous carbon mask over the substrate; Depositing a spacer layer over the amorphous carbon mask; Etching the spacer layer to form a spacer and expose the amorphous carbon mask; Exposing the substrate layer by selectively removing the amorphous carbon mask relative to the spacer; Depositing a gap fill layer around the spacer to cover the substrate layer but to expose the spacer; Removing the spacers selectively to the gap fill layer to form a gap fill layer over the substrate; Transferring the gap fill mask into the substrate.
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priorityDate 2008-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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