http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090127066-A

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filingDate 2009-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2009-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20090127066-A
titleOfInvention Epitaxial Silicon Wafers and Manufacturing Method Thereof
abstract When the epitaxial film is grown only on the surface of a large diameter wafer of 450 mm or more, the warpage of the wafer can be reduced, and the epitaxial silicon wafer capable of obtaining high intrinsic gettering capability and a method of manufacturing the same are provided. Intrinsic gettering function by introducing nitrogen, carbon, or both into a large-diameter, high-resistance silicon wafer with a diameter of 450 mm and a specific resistance of 0.1 Ω · cm or more into the melt during ingot pulling. Granted. Accordingly, after the epitaxial film 12 is grown, large warping of the silicon wafer 11 hardly occurs. As a result, the warpage of the epitaxial silicon wafer 10 can be reduced, and high intrinsic gettering capability can be obtained.
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