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publicationDate 2009-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20090126813-A
titleOfInvention Method of manufacturing oxide semiconductor thin film transistor
abstract A method of manufacturing an oxide semiconductor thin film transistor using a transparent oxide semiconductor as a channel material is disclosed. The method of manufacturing an oxide semiconductor thin film transistor disclosed includes forming a protective film on a channel layer and then performing a heat treatment at a temperature of 100 ° C. or higher for at least 1 hour.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150056240-A
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