http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090126077-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-9202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80896
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-40
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-792
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
filingDate 2008-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a529dbab16473ebc49ee9525de217d9
publicationDate 2009-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20090126077-A
titleOfInvention Memory semiconductor device and manufacturing method thereof
abstract The present invention relates to a memory semiconductor device and a method of manufacturing the same. The memory semiconductor device according to the present invention electrically connects a memory substrate on which memory transistors are formed, a peripheral circuit board on which peripheral circuit transistors are formed, an adhesive layer interposed between the memory substrate and the peripheral circuit boards, and the memory transistors and the peripheral circuit transistors. Contains a linking structure to connect. The memory substrate is used as an active region of the memory transistors and includes vertical active pillars having a source region, a channel region, and a drain region.
priorityDate 2008-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID44544175
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID17979268
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID453263778
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID454240392

Total number of triples: 27.