| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b809e16fc8e6cf409abc8b3376cda1d2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-04 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0483
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-3454
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-3418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-3427 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-30 |
| filingDate |
2007-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fae89a8904582f09ff789720e765351e |
| publicationDate |
2009-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20090117709-A |
| titleOfInvention |
How to Read a Nonvolatile Memory Cell Considering the Storage State of Adjacent Memory Cells |
| abstract |
The apparent charge stored at the floating gate (or other charge storage element) of the nonvolatile memory cell may change due to the coupling of the electric field based on the charge stored at adjacent floating gates (or other charge storage element). To solve this coupling problem, the read process for the target memory cell will provide compensation to the adjacent memory cell (or other memory cell), which reduces the coupling effect of the adjacent memory cell on the target memory cell. It is to let. The compensation applied is based on the state of the adjacent memory cell. In order to apply the correct compensation, the read process will at least partially mix the read operations for the adjacent memory cell and the read operations for the target memory cell. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120013841-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9576669-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8665647-B2 |
| priorityDate |
2006-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |