http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090116550-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3639b5b0ff4dc00e333ab93106b050c5 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 |
| filingDate | 2008-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4bf19c112aa82f5354bbb20172fbf0a8 |
| publicationDate | 2009-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20090116550-A |
| titleOfInvention | Nitride-based light emitting device and its manufacturing method |
| abstract | The present invention relates to a nitride-based light emitting device comprising a substrate and a nitride semiconductor layer formed thereon, wherein the composition C a1 Al x1 In y1 Ga z1 N (where 0 <a1≤0.1, And 0? X 1? 1, 0? Y 1? 1, 0? Z 1? 1, and a1 + x 1 + y 1 + z 1 = 1). In addition, a1 of the composition formula may be adjusted to be larger as the relaxed layer region closer to the substrate and smaller as the relaxed layer region closer to the nitride semiconductor layer. In addition, the mitigating layer is composed of a first easing layer and a second easing layer thereon, the first easing layer may be grown at 400 to 800 ℃ and the second easing layer may be grown at 900 to 1100 ℃. . |
| priorityDate | 2008-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.