http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090111883-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2004-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17a8889674c91044d451131e1a43c2b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24255475ee2858bef2f24326e1f4192a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8db9a767f30e5602cc03f7d25f1e5803 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bd5c75eb3417d8e95f05257768eb92f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7631b6bf2080ee446fbb1aa8ceed6b3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74bcb9c1f09e52bb92420807b1e286dc |
| publicationDate | 2009-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20090111883-A |
| titleOfInvention | Methods of restoring the hydrophobicity of low and extremely low thickness organosilicate films used as intermetallic dielectrics and articles made therefrom |
| abstract | Often used to reduce the RC delay in integrated circuits, silica-like frameworks in which alkyl or aryl groups (to add hydrophobicity to materials and create free volume) are often attached directly to Si atoms in a network. There is a dielectric film of porous organosilicate having. Si-R bonds rarely survive exposure to plasma or chemical treatments commonly used in processing. This is especially true for materials with open cell pore structures. When the Si-R bond is broken, the material loses hydrophobicity due to the formation of hydrophilic silanol and the low dielectric constant is impaired. The present invention provides a method for restoring hydrophobicity of a material using a new class of silylating agents that may have the general formula (R 2 N) x SiR y , wherein X and Y are each an integer of 1 to 3. And an integer from 3 to 1, and R and R 'are selected from the group consisting of hydrogen, alkyl, aryl, allyl and vinyl moieties. In addition, the mechanical strength of the porous organosilicate is likewise improved as a result of the silylation treatment. |
| priorityDate | 2004-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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