http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090106883-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 2008-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe374c6e43fbde15e0fb2bbeb4ec7421 |
| publicationDate | 2009-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20090106883-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | A method of manufacturing a semiconductor device capable of preventing a pattern defect from occurring due to the discharge of ammonia (NH 3 ) gas in a subsequent high temperature thermal process after forming an SOD film is provided. The method includes the steps of applying a fluid insulating film on a semiconductor substrate, heat treating the fluid insulating film to form an interlayer insulating film, forming a hard mask layer on the interlayer insulating film, and plasma treating the surface of the hard mask layer. And forming an anti-reflection film on the hard mask layer. |
| priorityDate | 2008-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.