http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090097827-A

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filingDate 2009-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad99986e1cdbf513d9be5f670bac23c6
publicationDate 2009-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20090097827-A
titleOfInvention Semiconductor device and manufacturing method thereof
abstract (Problem) Development of the reduction process of wiring which can suppress the damage to an interlayer insulation film in the manufacturing process of a semiconductor as much as possible.n n n Solution to Problem The present invention is a method for manufacturing a semiconductor device having a conductive member and an insulating film on a substrate, the method comprising the steps of forming a conductive member on a substrate, forming a insulating film on the conductive member, and Removing an insulating film on the conductive member, and blowing an organic silane gas and hydrogen gas to reduce the oxidized region on the conductive member, wherein the oxidized region on the conductive member may have been removed. It is characterized in that it is formed at the time.
priorityDate 2008-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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