http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090094060-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_20ea6bacc4716f6b8afe665043f17870 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6ac179bcbad17b8ea0260c65f201da92 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2009-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19648da9ad47c6e21d536202010561f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_550a7dd6b952dca94d90455c5ba83c1b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7169557e00468037e7fd87917616fdb6 |
| publicationDate | 2009-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20090094060-A |
| titleOfInvention | Method for the simultaneous grinding of a plurality of semiconductor wafers |
| abstract | The invention is arranged so that each semiconductor wafer is freely movable within the cutout of one of a plurality of carriers configured to rotate by a rolling device to move on a cycloidal trajectory, and the semiconductor wafer further comprises two rotating rings. Processed in a material-removing manner between shaped working disks, each said working disk comprising a working layer containing bonded abrasive, the shape of the working gap formed between the working layers is determined during the polishing process, at least The method of simultaneously grinding both sides of a plurality of semiconductor wafers, wherein the shape of the working area of one working disk is changed mechanically or thermally in accordance with the measured geometry of the working gap in such a way that the working gap has a predetermined shape. It is about.n n n The invention also relates to a method characterized in that some areas of the semiconductor wafer temporarily leave the working gap during processing.n n n The invention also provides that the carrier is entirely made of a first material, or a covering made of the first material is covered in whole or in part of a carrier made of a second material, such that only the first material is used with the working layer during the polishing process. A method is characterized by preventing the first material from interacting with a working layer that allows mechanical contact and reduces the sharpness of the abrasive. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140071896-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190093574-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8685270-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101230112-B1 |
| priorityDate | 2007-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID165960 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID450380254 |
Total number of triples: 26.