http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090091961-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2008-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9d989b3d9a19c632faf8752ae9c04ce |
| publicationDate | 2009-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20090091961-A |
| titleOfInvention | Method of forming semiconductor device |
| abstract | A formation method of semiconductor device is provided to improve the thin layer of the element isolation layer and the electrical characteristic of the gate insulating layer by performing the treatment process in the argon gas environment. The first buffer layer(102) and the second buffer layer(104) are formed on the top of the semiconductor substrate(100). The first buffer layer plays the role of protecting the top surface of the semiconductor board, and is formed of the oxide layer. A photoresist pattern(110) in which a hard mask layer(106), a anti-reflective layer(108) and a pattern for element isolation is formed is formed on the top of the second buffer layer. The hard mask layer is formed into the amorphous carbon layer. |
| priorityDate | 2008-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.