| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-0073 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0007 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate |
2008-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe205b6de8e0852d8d212c4a3ac37296 |
| publicationDate |
2009-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20090089340-A |
| titleOfInvention |
Rectifier for Crosspoints Based on Memory Array Architecture |
| abstract |
Asymmetrically programmed memory materials (such as solid electrolyte materials) that are used as rectifying elements to drive symmetrical or substantially symmetric resistive memory elements within a crosspoint memory architecture are described. The solid electrolyte element SE has a very high resistance in the OFF state (since it is a metal filament in the ON state) and a very low resistance in the ON state. These properties make this device an almost ideal diode. During the passage of the current (during programming / reading / erasing) of the memory device, the solid electrolyte material is also programmed to a low resistance state. The final state of the solid electrolyte material is reversed to a high resistance state while ensuring that the final state of the memory material is the desired state. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140038305-A |
| priorityDate |
2007-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |