http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090080514-A

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filingDate 2007-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8e560c40bbafa586fe44e7ca256eb9c
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publicationDate 2009-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20090080514-A
titleOfInvention Interconnect structure with improved electromigration reliability and manufacturing method
abstract There is provided an interconnect structure with improved electromigration (EM) reliability. The interconnect structure according to the present invention is at least partially integrated with the EM resistant liner 66 within the metal interconnect to prevent the open circuit causing the EM failure. In one embodiment, a “U-shaped” EM anti-liner 66 is provided, which is adjacent to the diffusion boundary separating conductive material 64, 68 from dielectric material 54B. In another embodiment, there is a space between the “U-shaped” EM prevention liner and the diffusion boundary. In yet another embodiment, a horizontal EM resistant liner adjacent to the diffusion boundary is provided. In yet another embodiment, there is a space between the horizontal EM liner and the diffusion boundary.
priorityDate 2006-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 24.