http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090074535-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2008-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_252ff606615cb2fd3393394eaf2ad8cd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7feea132b57f0f2827e11090d71d7fe7 |
| publicationDate | 2009-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20090074535-A |
| titleOfInvention | Device Separator Formation Method of Semiconductor Device |
| abstract | The present invention is to provide a method for forming a device isolation layer of a semiconductor device that can prevent the deterioration of the device characteristics by suppressing the generation of moat in the device isolation process using a shallow trench isolation (STI) process, According to an aspect of the present invention, there is provided a method of forming a buffer film on a substrate, forming a hard mask on the buffer film, forming a trench by partially etching the hard mask, the buffer film, and the substrate; Partially recessing the film to expose a portion of the substrate under the pad nitride layer, forming a sidewall protective film on the exposed upper surface of the substrate including the inner surface of the trench, and forming an insulating layer for the isolation layer to fill the trench. Forming, removing the hard mask, and partially recessing the insulating film for the device isolation layer. And a step of removing the buffer layer, wherein the buffer layer is formed of a material having a higher etch rate than the insulating layer for the device isolation layer under the same etching conditions. |
| priorityDate | 2008-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.