abstract |
A method of forming a dielectric structure such as a layer is disclosed. The method includes forming a high-k structure from a plurality of portions of the high-k material. Each of the plurality of portions of the high k material is formed by depositing a plurality of monolayers of the high k material and annealing the high k material. The high dielectric constant material may be a perovskite type material, including, but not limited to, strontium titanate. A dielectric structure, a capacitor including the dielectric structure, and a method for forming the capacitor are also disclosed.n n n n Perovskite, high dielectric constant, dielectric structure, crystalline |