http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090071538-A

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filingDate 2007-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e62a4c3fcaf6f8d6eb065c2b1ac3e5dc
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publicationDate 2009-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20090071538-A
titleOfInvention Semiconductor device and manufacturing method of semiconductor device
abstract In the semiconductor device according to the present invention, a groove is formed in the insulator layer on the substrate, and a gate electrode is formed in the groove so that the surface thereof is substantially flat with the surface of the insulator layer. A semiconductor layer is formed on the gate electrode via the gate insulating film, and at least one of a source electrode and a drain electrode is electrically connected to the semiconductor layer. In particular, the gate insulating film includes an insulator coating film formed on the gate electrode and an insulator CVD film formed thereon.
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