| abstract |
Provided are a method for forming a fine pattern using a block copolymer. In the fine pattern forming method, a block copolymer layer having a first polymer block, a second polymer block, and a third polymer block having different repeating units is formed on a substrate. Phase separation of the block copolymer layer results in a plurality of first domains containing a first polymer block, a plurality of second domains containing a second polymer block, and a plurality of third domains containing a third polymer block. Form. At least one of the first to third domains is selectively removed to form a fine mask pattern. |