http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090059443-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33c922e05f6133b7d72dbb849d77487d |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-62 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1454 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate | 2007-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c778329cca29f828c000ddb09cfcec4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6cc5e3b54b5d1b4461ea117b8cc68cbd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_255127c4b7348e8330078f480921fdf9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d641c8b41ddb2afd7f0790a6ecea5515 |
| publicationDate | 2009-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20090059443-A |
| titleOfInvention | Method for producing cerium oxide slurry for CPM |
| abstract | The present invention comprises the steps of: a) calcining cerium carbonate as a raw material to produce cerium oxide; b) grinding the cerium oxide firstly; c) mixing the primary pulverized cerium oxide with a solvent and a dispersant to prepare a slurry; And d) milling the mixed cerium oxide slurry using a bead in a range of 0.5 mm to 2 mm in diameter at a milling speed in the range of 20 to 120 rpm. It provides a method, a cerium oxide slurry prepared by the method and a shallow trench device separation method using the slurry.n n n The present invention provides a method for producing a cerium oxide slurry, by applying a low energy to the cerium oxide particles by adjusting the milling speed and the size of the beads during milling, it is possible to reduce the large particles that cause micro scratches during wafer polishing In addition, the agglomeration of the abrasive can be minimized by making the particle size of the cerium oxide fine particles in the slurry uniform and improving the dispersion stability. Therefore, the polishing performance can be improved in the polishing process applied to the manufacture of semiconductor devices requiring ultrafine patterns, thereby improving the reliability and productivity of the semiconductor manufacturing process. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101891233-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101292328-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012091338-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101422663-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012091338-A3 |
| priorityDate | 2007-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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