http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090058462-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_069a92549123806a5d654dc036a676e9 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D21-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D21-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-08 |
| filingDate | 2008-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c2bbdb45d7ef5bb19c0a8ddd96a54e7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8fedb24e259e791ec5fb0a661ab4ca1c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a61deda83a2e47fac302602e07af3de1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8db43a00fee50cbf9d5eb87cd286fb55 |
| publicationDate | 2009-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20090058462-A |
| titleOfInvention | Method of forming conductive material structure, plating apparatus and plating method |
| abstract | The manufacturing method of the conductive material structure of the present invention is to make it possible to form a conductive material structure suitable for realizing three-dimensional mounting by a penetrating electrode in a shorter time and to improve the prolongation of plating which is a barrier to practical use. In the method of manufacturing the conductive material, the conductive film 14 is formed on the entire surface including the surface of the recess 12 on the surface of the substrate W on which the recess 12 for the through electrode is formed, and the substrate W is formed. The resist pattern 30 is formed at a predetermined position on the surface, and the first electroplating is carried out under the first plating condition using the conductive layer 14 as the feed layer. 36 is embedded, and after the embedding of the first plated film 36 into the recessed portion 12 for the penetrating electrode is completed, the second layer having the conductive film 14 and the first plated film 36 as a feed layer. Second electroplating is performed under the plating conditions to grow the second plating film 38 on the conductive film 14 and the first plating film 36 exposed to the resist opening 32 of the resist pattern 30. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113363152-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130119320-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101880148-B1 |
| priorityDate | 2007-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.