| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01074
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01024
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01029
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01047 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-11 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06 |
| filingDate |
2008-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ef812894bfc2ae4bfeb2ccff9f9854c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a135281b7efe99e6ca6c3abe700a856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2dbf91555ffd42c6b85f36cec8599f6e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba208b9b88ac25f7472c65235dedcf91 |
| publicationDate |
2009-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20090053679-A |
| titleOfInvention |
Bump lower conductive layer etching composition and method of forming a conductive bump structure using the same |
| abstract |
In the bump lower conductive layer etching composition used to form the conductive bumps and a method of forming a conductive bump structure using the same, the bump lower conductive layer etching composition comprises 40 to 90% by weight of hydrogen peroxide and ammonium hydroxide or tetraalkylammonium hydroxide 1 to 20% by weight of the basic aqueous solution, 0.01 to 10% by weight of the alcohol compound and 2 to 30% by weight of the ethylenediamine-based chelating agent. The etching efficiency of the bump lower conductive layer including titanium or titanium tungsten may be increased during the etching process using the etching composition, and foreign substances including titanium oxide may be completely removed to prevent contamination of the probe needle. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9399822-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101278426-B1 |
| priorityDate |
2007-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |