http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090053067-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
filingDate 2007-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c07f37a608b4ac0e375a7de451bf0bb1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86bf602c3328cce6ae998008baa44b76
publicationDate 2009-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20090053067-A
titleOfInvention Amorphous carbon film, its formation method and manufacturing method of semiconductor device using same
abstract The present invention relates to an amorphous carbon film, a method for forming the same, and a method for manufacturing a semiconductor device using the same.n n n In the amorphous carbon film according to the present invention, the inert gas and the source gas are introduced into the chamber, the plasma is excited, and the inert gas is interrupted to form the amorphous carbon film using only the source gas. The hydrocarbon compound in a liquid state having a single bond (CC) and at least one or more double bonds (C = C) is formed using a source gas vaporized.n n n According to the present invention, it is possible to prevent an increase in the refractive index and extinction coefficient of the amorphous carbon film generated when the inert gas is continuously introduced during the formation of the amorphous carbon film, thereby improving the reliability of the photolithography process. The reliability of the semiconductor element using a carbon film as a hard mask film can be improved.n n n n Amorphous carbon film, refractive index, extinction coefficient, inert gas, cyclic, single bond, double bond
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014149175-A1
priorityDate 2007-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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