| abstract |
The semiconductor device 10 includes a semiconductor element 12; A group of inner terminals 14 connected to the semiconductor element 12 through bonding wires 13 and arranged in an area array so as to be exposed inside the bottom; A group of non-terminal terminals 15 disposed outside the group of inner terminals 14; A group of outer terminals 17 positioned directly above the outer terminals 15 and exposed from the surface, and electrically connected to the outer terminals 15 positioned directly below, respectively, via connecting conductors 16; And a sealing resin for sealing the non-exposed portions of the semiconductor element 12, the bonding wires 13, and the inner terminals 14, the outer terminals 15, and the outer terminals 17. 18). Precious metal plating layers 19 and 19b are formed on at least the inner terminals 14, the outer terminals 15, and the respective terminal surfaces of the outer terminals 17. |