| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2008-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23b76f11eb5d512ca88962d4037a1290
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d04be56a9d142d17374c31321a508079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_157a44235e9aeb86255b4f29e6ef2543
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db8c6f69fcb7651e8619e01c867ad467
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f4cf4e4ac55d6c9a53e7ecff4a7f75a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40e17732f94cf8ada4f2212d89d23c4d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0de5c8673808c6c28e48e6efbc8c96d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d510859d663e00abdb15a7f2fc338216 |
| publicationDate |
2009-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20090040851-A |
| titleOfInvention |
Method and system for improving dielectric film quality for void free gap fill |
| abstract |
The present invention provides a method of forming a silicon oxide layer on a substrate that covers at least a portion of the substrate. The method includes providing a substrate and forming a first silicon oxide layer covering at least a portion of the substrate. The first silicon oxide layer includes residual water, hydroxyl groups, and carbon species. The method also includes exposing the first silicon oxide layer to a plurality of silicon-containing species. The method includes annealing the first silicon oxide layer, partially mixed with the plurality of amorphous silicon components, in an oxidizing atmosphere to form a second silicon oxide layer on the substrate. At least a portion of the amorphous silicon component is oxidized to become part of the second silicon oxide layer and substantially free of unreacted remaining hydroxyl groups and carbon species of the second silicon oxide layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014179072-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11488855-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11742238-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200008506-A |
| priorityDate |
2007-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |