http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090039607-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31629 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02131 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3145 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 2008-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f3ac87803e9af4411fce7c8ed58c311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_275a6e85c726ea64bd06c34106e9e19c |
| publicationDate | 2009-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20090039607-A |
| titleOfInvention | Method of manufacturing semiconductor device, semiconductor device and electronic device |
| abstract | An object of the present invention is to provide a semiconductor device having an insulating layer having high dielectric breakdown voltage characteristics, low dielectric constant, and low hygroscopicity. Another object of the present invention is to provide a high performance and highly reliable electronic device using the semiconductor device. An insulator containing nitrogen, such as silicon oxynitride or silicon nitride oxide, and an insulator containing nitrogen and fluorine, such as silicon oxynitride with fluorine or silicon nitride oxide with fluorine, are alternately deposited to form an insulating layer. By interposing the insulator containing nitrogen and fluorine between the insulators containing nitrogen, moisture absorption of the insulator containing nitrogen and fluorine can be prevented, and breakdown breakdown voltage can be improved. In addition, by containing fluorine, the dielectric constant can be reduced. |
| priorityDate | 2007-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 106.