| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_045f3b29938ea388e5bd261041c30f09 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31678 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00 |
| filingDate |
2007-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b32b6db343fc48da5a425c65d61d757c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d553ab6a7e02dd612ada1cd50a019e3e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f743ed000ed37ac070ebb88380630cc2 |
| publicationDate |
2009-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20090038461-A |
| titleOfInvention |
Method and apparatus for vaporization and transport of precursor solution for atomic layer deposition |
| abstract |
Improved apparatus and methods for atomic layer deposition (ALD) are described. In particular, improved methods and apparatus for the vaporization and transport of ALD precursor solutions are provided. In particular, the present invention is useful for processing low volatility metals, metal oxides, metal nitrides and other thin film precursors. The present invention uses a complete vaporization chamber and room temperature valve system to generate true ALD vapor pulses while increasing the utilization of the precursor solution. |
| priorityDate |
2006-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |