http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090037364-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02686 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate | 2008-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bca60e11ea5cabf6bf9d4c65da0e3a6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e0ae01e2bc0bcab67024c29f341b739 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90a374176e49b6949d98fca23538a820 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62bda92ebb6b753395cadcd2de2ad402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e432e03d83281a7953d3188091956c0e |
| publicationDate | 2009-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20090037364-A |
| titleOfInvention | Manufacturing Method of SOI Substrate |
| abstract | The present invention provides a method for producing a semiconductor substrate having a single crystal semiconductor layer that can withstand practical use even when a substrate having a low heat resistance temperature such as a glass substrate is used.n n n The source gas is excited to generate a plasma, and ion species contained in the plasma are added from one surface of the single crystal semiconductor substrate to form a damaged region, and an insulating layer is formed on one surface of the single crystal semiconductor substrate. The support substrate is brought into close contact with the single crystal semiconductor substrate with the interposed therebetween, and the single crystal semiconductor substrate is heated to separate from the damaged region, separated from the support substrate to which the single crystal semiconductor layer is bonded and the single crystal semiconductor substrate, and bonded to the support substrate. Dry etching is performed on the surface of the single crystal semiconductor layer, the laser beam is irradiated to the single crystal semiconductor layer, and at least a portion of the single crystal semiconductor layer is melted to cut and crystallize the single crystal semiconductor layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190091391-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101322444-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8492877-B2 |
| priorityDate | 2007-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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