| abstract |
The present invention generally provides a method for forming multilevel interconnect structures comprising multilevel interconnect structures comprising an air gap. One embodiment includes forming trenches in the first dielectric layer, wherein air gaps are formed in the first dielectric layer, depositing a conformal dielectric barrier film in the trenches, wherein the conformal dielectric barrier film forms air gaps in the first dielectric layer. A low K dielectric material configured to function as a barrier against the wet etch chemistry used to form—depositing a metallic diffusion barrier film over the conformal low K dielectric layer, and depositing a conductive material to fill the trenches Providing a method for forming conductive lines in a semiconductor structure. |