| abstract |
An object of the present invention is to provide an IC chip in a high frequency region, in particular, a package substrate in which no malfunction or error occurs even in excess of 3 GHz. To achieve the above object, the conductor layer 34P on the core substrate 30 has a thickness of 30 μm. The conductor circuit 58 on the interlayer resin insulating layer 50 is formed to be 15 mu m. Since the conductor layer 34P is made thick, the volume of the conductor itself can be increased and the resistance can be reduced. In addition, since the conductor layer 34 is used as the power supply layer, the power supply capability to the IC chip can be improved. |