| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12044
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 |
| filingDate |
2007-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0c0dabb751d15733ef141580e4c5eaf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dea3fd53af3ff6ca7fbd4b5e25aa83b5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54e7f623c7391f0ca7afa6e3d3d4b084
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19786f66807261aec2843cb6426b1e0b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_920a76d3a2147f3dec673e8001c0800d |
| publicationDate |
2009-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20090035007-A |
| titleOfInvention |
Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus and recording medium |
| abstract |
The substrate processing method includes a first step of setting a substrate to which a metal layer is formed to a first temperature, adsorbing a processing gas containing an organic compound to the metal layer to form a metal complex, and processing the substrate to be treated at the first temperature. It has a 2nd process of heating so that it may become higher 2nd temperature, and sublimate the said metal complex. |
| priorityDate |
2006-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |