http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090031294-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2024 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-027 |
filingDate | 2008-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3aa197a0faee499992f0da36115aa856 |
publicationDate | 2009-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20090031294-A |
titleOfInvention | Pattern formation method and resist material used for this |
abstract | The present invention is applied to a substrate by applying a first positive resist material containing a polymer compound obtained by copolymerizing a repeating unit having naphthol and a repeating unit whose alkali solubility is improved by an acid, to form a first resist film, followed by high heat treatment. Exposed to energy rays, developed, and then crosslinked and cured the first resist film by irradiation with a high energy ray having a wavelength of 200 nm or less, and a second positive resist material was applied thereon to form a second resist film. And the pattern formation method which has the process of exposing and developing by high energy ray after heat processing.n n n According to this invention, after forming a 1st pattern with a 1st positive type resist material, this is insolubilized in alkaline developing solution and a resist solution. By apply | coating a 2nd resist material further on that and exposing and developing, double patterning which cuts the pitch between patterns in half can be performed. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170006341-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180092310-A |
priorityDate | 2007-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 805.