http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090024767-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3e589c1da1dd4210bc5c420ea3cec32c |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-083 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 |
| filingDate | 2009-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ac274cd93076cba97d306f5fefd46ad http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a971a46e934f67a594ecbdc5c089ab5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_672a9e7a1aae252fe9161fbec81aa44f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a83cafd46ea7046f3a7445cdc56796e8 |
| publicationDate | 2009-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20090024767-A |
| titleOfInvention | P type semiconductor zinc oxide film production process and pulse laser deposition method using transparent substrate |
| abstract | A p-type semiconductor zinc oxide (ZnO) film and a method of forming the film are disclosed. The film is co-doped with phosphorus (P) and lithium (Li). The pulse laser deposition method used for film growth is described. Also described is a pulsed laser deposition process using transparent substrates, including a pulsed laser source, a transparent substrate at the wavelength of the pulsed laser, and a multiple target system. The optical path of the pulsed laser is arranged in such a manner that the pulsed laser is incident from the backside of the substrate, passes through the substrate, and then focuses on the target. By translating the substrate towards the target, this geometry allows the deposition of small features using the root of the flux plume, which may exist at the one-dimensional change stage along the target surface normal, before the angular width of the plume is widened by three-dimensional adiabatic expansion. To make it possible. This may provide small deposition feature sizes that may be similar in size to the laser focal spot and provide an innovative method for direct deposition of patterned materials. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011125036-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110064282-A |
| priorityDate | 2006-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 56.