| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_52cd00892a548e92d179344efa0bd3bd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2007-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a2cc992ed5e7b0d0f64a03a811609f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af002042497243066b2103729c7a7e30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79862bf27913f71cca174d8fa84f089b |
| publicationDate |
2009-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20090018638-A |
| titleOfInvention |
Structure and method for forming shield gate trench field effect transistor connected with shield electrode and gate electrode |
| abstract |
The field effect transistor (FET) includes a plurality of trenches extending into the semiconductor region. Each trench includes a gate electrode and a shield electrode, an interelectrode dielectric exists between the gate electrode and the shield electrode, and the shield electrode and the gate electrode are electrically connected. |
| priorityDate |
2006-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |