| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2007-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f77722f6ee20b1d44b598261f98a098
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96b2a171ced1231a1a8790e6cbd17cd0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34f1b0db9d94fd905b870ee80fb12146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fbe80ea444e4e40d93d8090030ffe86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b856ffceef1c11c6d7288dd112bd22a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64862d96c71694676103ca3da7e4944a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_409c7b7f6f6794f5aee244bcb88ba1ad |
| publicationDate |
2009-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20090014870-A |
| titleOfInvention |
Method for forming DXYSC3 film by ALD, lamination structure of semiconductor thin film including DXYSC3 film and its formation method |
| abstract |
A method of forming a DyScO3 film by ALD, a laminated structure of a semiconductor thin film including a DyScO3 film, and a method of forming the same are disclosed. DyScO3 film formation method by the ALD of the present invention comprises the steps of conveying the source material in the liquid phase to the vaporizer located at one end of the chamber; Vaporizing the source materials carried in the liquid phase in the vaporizer; Supplying the vaporized source materials into the chamber to form a DyScO3 film by ALD method. |
| priorityDate |
2007-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |