| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24331 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F5-069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F5-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate |
2007-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bff9d180bb606d84439bec044d6b04dd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9711a30c5d169092e5087cb7597e1685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d441f969ab3aafcc873fff97a436814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f86932f353957a987d5f769e023594a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da382957d15b624b62f209d3c628d433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6cdcf63c4c99f6215c52805accf51bd0 |
| publicationDate |
2009-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20090013994-A |
| titleOfInvention |
Organometallic precursor, method of forming thin film using the same and method of manufacturing metal wiring |
| abstract |
An organometallic precursor that can be used in the manufacture of a semiconductor device, a method for forming a thin film using the same, and a method for producing a metal wiring, comprising: an organometallic precursor including a central metal, a borohydride and a polarization-reducing amine ligand coordinated thereto Is provided on the substrate, and then the organic metal precursor is decomposed to form a thin film on the substrate. The organometallic precursor includes a polarization reducing amine based ligand so that it can be supplied to the chamber at a constant inflow rate. Accordingly, the stability and efficiency of the semiconductor device manufacturing process can be improved. |
| priorityDate |
2007-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |