http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090008056-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B2203-014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B2203-013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B2203-017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B2203-032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C17-06513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B2214-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B2203-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6675
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C17-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82B1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B3-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B3-148
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82B1-00
filingDate 2007-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c0e64e5dcde7348bbf3a2c2dfb001fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6bb53c1967f2921be2edda954be2ad1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33da362298352ca0e1c80b21571a06c7
publicationDate 2009-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20090008056-A
titleOfInvention Nanostructured or polycrystalline silicon formation method using a micro heater, nanostructured or polycrystalline silicon formed thereby and an electronic device using the same
abstract The present invention utilizes a micro heater unit or an array that can significantly reduce the power consumption and grow a large area. The present invention relates to a nanostructure or polycrystalline silicon formed thereby, and an electronic device using the same. According to the present invention, it is possible to form nanostructures or polycrystalline silicon, such as carbon nanotubes, gallium nitride nanowires, zinc oxide nanowires, and the like, in particular, with low power consumption and large area, without a separate high temperature processing apparatus.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101105824-B1
priorityDate 2007-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419519717
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559581
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID117559
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559169
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559192
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14806
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID26010
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID297

Total number of triples: 39.