| abstract |
Provided is a method for manufacturing a semiconductor device for obtaining a semiconductor device capable of forming bumps with high precision on an electrode portion having a fine pitch and achieving good connection reliability with a connection object. In the manufacturing method of a semiconductor device, with respect to the semiconductor substrate 10 which has the electrode part 11, the resin film formation process of forming a resin film so that the electrode part 11 is covered, and an electrode part 11 with respect to a resin film ), An opening forming step of forming an opening at a position corresponding to the opening), a supplying step of supplying a bump forming material to the opening, a heat forming process, and a bump forming step of forming a bump 41 in the opening, and a resin film is removed. The removal process is performed. |