http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090002501-A

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filingDate 2007-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9801226396a7d3f4e927e16ad6250c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4feeee89058fe0bc18115bef328a478
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publicationDate 2009-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20090002501-A
titleOfInvention Phase change memory device polishing CMP slurry composition and polishing method using the same
abstract The present invention relates to a CMP slurry composition for polishing a phase change memory device and a polishing method using the same, and more particularly, to a phase change memory device polishing CMP slurry composition comprising ultrapure water, abrasive particles, and nitrogen compounds. It relates to a polishing method using the same.n n n According to the CMP slurry composition for polishing a phase change memory device according to the present invention and a polishing method using the same, the polishing rate of the phase change memory device and the polishing stop film of the phase change memory device and the silicon oxide film can be improved. While achieving the ratio, process defects such as dishing and erosion can be minimized to provide a high quality polishing surface.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011096745-A2
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priorityDate 2007-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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