| abstract |
An object of the present invention is to propose a method of manufacturing a display device capable of mass production, without complicating the process of the thin film transistor. As a source gas, silicon hydride or silicon halide is used as a source gas to form a microcrystalline semiconductor film using a microwave plasma CVD apparatus having a frequency of 1 GHz or more, and a display device is connected to the thin film transistor and the thin film transistor using the microcrystalline semiconductor film. Plasma using a microwave having a frequency of 1 GHz or higher has a high electron density and facilitates dissociation of silicon hydride or silicon halide, which is a raw material gas, so that the mass productivity of the display device can be improved. |