| abstract |
The present invention provides a photoelectric conversion film formed of a semiconductor nanocrystal, a color filter formed on the photoelectric conversion film, a pixel electrode formed on the lower side of the photoelectric conversion film, and a transparent common electrode formed on an upper side of the color filter. The image sensor according to the present invention is excellent in the photoconductivity and quantum effect by using a semiconductor nanocrystal as a photoelectric conversion material, so that high resolution and high sensitivity can be realized, digital camera, video It can be applied to a variety of cameras, web cameras, camera phones. |