Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48465 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02647 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02609 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
filingDate |
2008-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddd7a7775c2016d39594f0f3a3fdb024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8862354814d1965fc6cb493305966b4d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcaf3342fe45bd17e8505d33a90cb3b4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4170b3f8f92cd3fd9b2096a2be1ce852 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a17f9b06d6828befb34d9b4f722b854 |
publicationDate |
2008-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20080101805-A |
titleOfInvention |
Semiconductor layer growth method, semiconductor light emitting device manufacturing method, semiconductor light emitting device and electronic device |
abstract |
A method of growing a semiconductor layer comprising growing a semiconductor layer of a hexagonal crystal structure having an (11-22) or (10-13) plane orientation on a (1-100) plane of a substrate of a hexagonal crystal structure. This is disclosed. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10840268-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014168436-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101504731-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190095533-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11728349-B2 |
priorityDate |
2007-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |