| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78654
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-03552 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-421 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate |
2008-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a953d20a16a0e03217c79b4ae7b92a42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed3c4bef2ce802a600b9fe85c40e4ed1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90a374176e49b6949d98fca23538a820
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75c6267d8c775da162e94c833c3742ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_029e96c986265b75dc5b657a9a369964 |
| publicationDate |
2008-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20080101658-A |
| titleOfInvention |
Manufacturing method of SOI board | substrate, and manufacturing method of semiconductor device |
| abstract |
According to the hydrogen ion implantation method, an SOI substrate is produced in which the base substrate is made of a low heat resistance substrate such as a glass substrate, has a high surface flatness, and has a thin semiconductor layer of 100 nm or less.n n n The semiconductor substrate and the base substrate are adhered through the bonding layer. By heat-processing and dividing a semiconductor substrate, the base substrate in which the semiconductor layer isolate | separated from the semiconductor substrate was fixed can be obtained. By irradiating and melting a laser beam to this semiconductor layer, the flatness of the surface of a semiconductor layer is improved and its crystallinity is restored. After irradiation of the laser light, the semiconductor layer is made thin by etching or the like. By going through the above steps, an SOI substrate having a single crystal semiconductor layer having a thickness of 100 nm or less on the base substrate can be produced. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102566972-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180033153-A |
| priorityDate |
2007-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |