| abstract |
The present invention relates to systems and methods for nanowire growth and harvesting. In one embodiment, a method for nanowire growth and doping, comprising a method for growing oriented nanowires using a patterned substrate, together with a method for epitaxially oriented nanowire growth using a combination of silicon precursors. Methods are provided. In another embodiment of the present invention, methods are provided for improving nanowire quality by using a sacrificial growth layer. In another embodiment of the present invention, methods of transferring nanowires from one substrate to another are provided.n n n n Nanowires, Orientation, Catalyst-Repellent Materials, Precursor Gas Mixtures |