| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_34263a1d9767236ba10183da556a136b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S134-902 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2008-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b5221e7c893c808a5e920fa74de2eff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36e73b723bced82ebcea9b34423e4c71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25a5509abaaf09d03067c10e48d72105 |
| publicationDate |
2008-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20080089328-A |
| titleOfInvention |
Mass production method of semiconductor integrated circuit device and manufacturing method of electronic device |
| abstract |
In the semiconductor mass production process, in order to prevent contamination of the wafer by the transition metal, the mass production method of the semiconductor integrated circuit device of the present invention includes a process of depositing a Ru film on each wafer flowing through the wafer process, and the Ru Removing the Ru film on the outer edge or back of the device surface of each wafer with an aqueous solution containing ortho-iodic acid and nitric acid, for each wafer on which the film is deposited; and on each of the wafers on which the Ru film is removed. On the other hand, a process for performing a lithography process, an inspection process, or a heat treatment process in common relation with a plurality of wafers belonging to the lower layer process (initial element formation process and wiring process before gate insulation film formation) is provided. |
| priorityDate |
1999-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |