| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f1192a135e4bc40a5f201a9646f20172 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-049
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2008-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcba010d110bfdc9dd5f12c70e930753 |
| publicationDate |
2008-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20080084695-A |
| titleOfInvention |
Method of Manufacturing Silicon Carbide Semiconductor Devices |
| abstract |
A MOS type SiC semiconductor device having a longer lifetime and higher reliability for TDDB of a gate oxide film is disclosed. The semiconductor device has a silicon carbide (SiC) substrate, a polycrystalline Si gate electrode, a gate oxide film interposed between the SiC substrate and the polycrystalline Si gate electrode and formed by thermal oxidation of the surface of the SiC substrate, and an ohmic contact in electrical contact with the SiC substrate. MOS (metal oxide semiconductor) structure. The semiconductor device further includes a polycrystalline Si thermal oxide film formed by oxidizing the surface of the polycrystalline Si gate electrode. The gate oxide film has a thickness of 20 nm or less, preferably 15 nm or less. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210125701-A |
| priorityDate |
2007-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |