http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080084671-A

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filingDate 2008-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6abf9fa3e61c82aec6622990c94801fb
publicationDate 2008-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20080084671-A
titleOfInvention Multigate Field Effect Transistor Switch
abstract An electronic circuit is disclosed on a semiconductor substrate with insulated multiple field effect transistors. In some embodiments, the device comprises a substrate; A first semiconductor circuit formed on the substrate; A second semiconductor circuit formed on the substrate; And a multi-gate field effect transistor (MuGFET) device overlying the substrate and electrically connected to the first semiconductor circuit and the second semiconductor circuit, the MuGFET device in response to an input signal. A signal path is provided between the circuit and the second semiconductor circuit.
priorityDate 2007-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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