| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 |
| filingDate |
2008-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b2b7edd5fa336df7038ca46d80202d9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f238b077794d9b94f501a18cd6ec90d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_844eba9ddb0ab8e958bdcf0e5a580cfa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29d86490305cf48157d6d4c81a0de428 |
| publicationDate |
2008-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20080079175-A |
| titleOfInvention |
Sputter film forming method and sputter film forming apparatus |
| abstract |
[assignment]n n n Provided the technique which can easily form the alloy layer containing an additive metal on a to-be-processed object so that it may have concentration gradient in thickness direction by sputtering in one processing container.n n n [Workaround]n n n The plasma generating gas is supplied into a processing container including a metal target made of an alloy containing an additive metal and a main metal, and the gas is supplied by supplying electric power to the gas to form a plasma. The first film forming step of forming the first alloy film into the object to be processed and the plasma generated by varying at least one of the pressure and the electric power in the processing vessel, and the sputtered particles of the metal target produce a concentration of the added metal. A sputtering film was formed to include a second film forming step of laminating a second alloy film different from the concentration of the additive metal of the first alloy film to the first alloy film, thereby forming a film having a different concentration of the additive metal to the main metal in the thickness direction. Can form a film. |
| priorityDate |
2007-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |