http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080075015-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd5f3061b68bcbebb150a645605367f3 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-564 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-24 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-12 |
| filingDate | 2006-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ec0c94a27a2705b221c09e11db6aadb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3498813d742a13449d07cbd46f30007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6086835b80263f160b450b2edcdffa69 |
| publicationDate | 2008-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20080075015-A |
| titleOfInvention | Evaporation material deposition method |
| abstract | The present invention relates in particular to a method of depositing evaporation material on a base material to dope a semiconductor material. According to the method, an evaporation charge 1 is introduced into the evaporation chamber, in which a specific amount 2 of the charge of the evaporation material is hermetically sealed by the envelope 3, and the envelope 3 is heated and / or in the evaporation chamber. Opened by reducing the pressure, the evaporation material is subsequently evaporated in the evaporation chamber and deposited on the base material. The present invention further relates to a method for producing the evaporation charge 1 and to an evaporation charge 1. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150029147-A |
| priorityDate | 2005-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.